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參數(shù)資料
| 型號： | NTE2582 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Speed Switching Regulator |
| 中文描述： | 硅NPN晶體管高速開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2582 |
NTE2582
Silicon NPN Transistor
High Speed Switching Regulator
Features:
High Breakdown Voltage and High Reliability
Fast Switching Speed
Wide ASO
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
≤
300
μ
s, Duty Cycle
≤
10%.
500V
400V
7V
12A
25A
2W
40W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
EBO
h
FE
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1.6A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 1.6A
V
CB
= 10V, f = 1MHz
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A
–
–
10
Emitter Cutoff Current
–
–
10
DC Current Gain
20
–
50
10
–
–
10
–
–
Current Gain–Bandwidth Product
f
T
–
20
–
MHz
Output Capacitance
C
ob
–
160
–
pF
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
–
–
0.8
V
Base–Emitter Saturation Voltage
–
–
1.5
V
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