參數(shù)資料
型號(hào): NTE2583
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor High Speed Switching Regulator
中文描述: 硅NPN晶體管高速開(kāi)關(guān)穩(wěn)壓器
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 23K
代理商: NTE2583
NTE2583
Silicon NPN Transistor
High Speed Switching Regulator
Features:
High Breakdown Voltage and High Reliability
Fast Switching Speed
Wide ASO
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
300
μ
s, Duty Cycle
10%.
500V
400V
7V
10A
20A
2W
35W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
Collector Cutoff Current
I
CBO
I
EBO
h
FE
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1.6A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 1.6A
V
CB
= 10V, f = 1MHz
I
C
= 6A, I
B
= 1.6A
I
C
= 6A, I
B
= 1.6A
10
Emitter Cutoff Current
10
DC Current Gain
20
50
10
10
Current Gain–Bandwidth Product
f
T
20
MHz
Output Capacitance
C
ob
120
pF
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
0.8
V
Base–Emitter Saturation Voltage
1.5
V
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