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參數(shù)資料
| 型號： | NTE253 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Dual General-Purpose JFET-input Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 硅達林頓晶體管互補功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE253 |
NTE253 (NPN) & NTE254 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
High DC Current Gain: h
FE
= 2000 (Typ) @ I
C
= 2A
Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V
80V
5V
4A
100mA
40W
0.32W/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
3.23
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
CEO
I
CBO
I
C
= 50mA, I
B
= 0, Note 1
V
CE
= 80V, I
B
= 0
V
CE
= 80V, I
E
= 0
V
CE
= 80V, I
E
= 0, T
C
= +100
°
C
V
BE
= 5V, I
C
= 0
80
–
–
V
μ
A
μ
A
μ
A
mA
Collector Cutoff Current
–
–
100
–
–
100
–
–
500
Emitter Cutoff Current
I
EBO
–
–
2.0
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