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參數(shù)資料
| 型號： | NTE2545 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Darlington, High Speed Driver |
| 中文描述： | 硅晶體管互補達林頓，高速驅動器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE2545 |
NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
High Speed Switching
Wide ASO Range
High Gain Bandwidth Product
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V
60V
5V
5A
8A
1.75W
30W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Collector Emitter Saturation Volt-
age
NTE2545
NTE2546
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 2.5A
V
CE
= 5V, I
C
= 2.5A
Min
–
–
2000 5000
–
Typ
–
–
Max
0.1
3.0
–
–
Unit
mA
mA
200
MHz
I
C
= 2.5A, I
B
= 5mA
–
0.9
–
V
–
–
70
60
1.0
–
–
–
1.5
2.0
–
–
V
V
V
V
V
BE(sat)
V
(BR)CBO
I
C
= 5mA, I
E
= 0
V
(BR)CEO
I
C
= 50mA, R
BE
=
∞
I
C
= 2.5A, I
B
= 5mA
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相關代理商/技術參數(shù) |
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|---|---|
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