參數(shù)資料
型號(hào)： NTE2540
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Darlington, High Voltage Switch
中文描述： 硅NPN晶體管達(dá)林頓，高壓開關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 22K
代理商： NTE2540
NTE2540
Silicon NPN Transistor
Darlington, High Voltage Switch
Features:
High DC Current Gain: h
FE
= 600 Min (V
CE
= 2V, I
C
= 2A)
Monolithic Construction
w
/Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current. I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600V
400V
5V
6A
1A
2W
25W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Symbol
I
CBO
I
EBO
V
(BR)CEO
I
C
= 10mA, I
B
= 0
h
FE
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 4A
V
CE(sat)
I
C
= 4A, I
B
= 40mA
V
BE(sat)
I
C
= 4A, I
B
= 40mA
V
ECF
I
E
= 4A, I
B
= 0
C
ob
V
CB
= 50V, I
E
= 0, f = 1MHz
t
on
V
CC
= 100V,
t
stg
t
f
Test Conditions
V
CB
= 600V, I
E
= 0
V
EB
= 5V, I
C
= 0
Min
–
–
400
600
100
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
35
1
8
5
Max Unit
0.5
3
–
–
–
2.0
2.5
3.0
–
–
–
–
mA
mA
V
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Emitter–Collector Forward Voltage
Collector Output Capacitance
Turn–On Time
Storage Time
Fall Time
V
V
V
pF
μ
s
μ
s
μ
s
I
B1
= –I
B2
= 40mA,
Duty Cycle
≤
1%
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