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參數(shù)資料
| 型號： | NTE2526 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Current Switch |
| 中文描述： | 硅晶體管互補大電流開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2526 |
NTE2526 (NPN) & NTE2527 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
Low Collector–Emitter Saturation Voltage
High Current and High f
T
Excellent Linearity of h
FE
Fast Switching Time
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V
100V
6V
4A
8A
1W
20W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 3A
Min
–
–
140
40
Typ
–
–
–
–
Max Unit
1.0
1.0
400
–
μ
A
μ
A
Gain–Bandwidth Product
NTE2526
NTE2527
f
T
V
CE
= 10V, I
C
= 500mA
–
–
180
130
–
–
MHz
MHz
Output Capacitance
NTE2527
NTE2526
C
ob
V
CB
= 10V, f = 1MHz
–
40
–
pF
–
65
–
pF
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