參數(shù)資料
型號(hào)： NTE2528
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors High Voltage Switch
中文描述： 硅晶體管互補(bǔ)高壓開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 22K
代理商： NTE2528
NTE2528 (NPN) & NTE2529 (PNP)
Silicon Complementary Transistors
High Voltage Switch
Features:
High Voltage and High Current Capacity
Fast Switching Time
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V
160V
6V
1.5A
2.5A
1W
15W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 120V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 10A
V
CE
= 10V, I
C
= 50mA
Min
–
–
100
80
Typ
–
–
–
–
Max Unit
1.0
1.0
400
–
μ
A
μ
A
Gain–Bandwidth Product
f
T
–
120
–
MHz
Output Capacitance
NTE2528
C
ob
V
CB
= 10V, f = 1MHz
–
12
–
pF
NTE2529
–
22
–
pF
Collector–Emitter Saturation Voltage
NTE2528
NTE2529
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
–
–
0.13
0.2
0.5
0.45
V
V
相關(guān)PDF資料
PDF描述
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