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參數(shù)資料
| 型號(hào)： | NTE2530 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Voltage Driver |
| 中文描述： | 硅晶體管互補(bǔ)高壓驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 23K |
| 代理商： | NTE2530 |
NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
High Current Capacity: I
C
= 2A
High Breakdown Voltage: V
CEO
= 400V Min
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V
400V
5V
2A
4A
1W
15W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
NTE2530
NTE2531
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 300V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 100mA
Min
–
–
40
Typ
–
–
–
Max Unit
1.0
1.0
200
μ
A
μ
A
V
CE
= 10V, I
C
= 100mA
–
–
60
40
–
–
MHz
MHz
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
V
CE(sat)
V
BE(sat)
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
–
–
–
–
–
–
–
1.0
1.0
–
–
–
V
V
V
V
V
400
400
5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTE2531 | 制造商:NTE Electronics 功能描述:TRANSISTORBJTPNP400V V(BR)C 制造商:NTE Electronics 功能描述:TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C) 制造商:NTE Electronics 功能描述:T-PNP.SI HI VLTG DRIVER 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, -400V, 2A, TO-251-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-400V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:15W; DC Collector Current:2A; DC Current Gain hFE:40 ;RoHS Compliant: Yes |
| NTE2532 | 制造商:NTE Electronics 功能描述:INTEGRATED CIRCUIT NMOS 32K EPROM 300NS 制造商:NTE Electronics 功能描述:IC, EPROM, 32KBIT, 300NS, DIP-24; Memory Type:EPROM - OTP; Memory Size:32Kbit; Memory Configuration:32K x 8; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:24; Access Time:300ns 制造商:NTE Electronics 功能描述:EPROM UV 32K-Bit 4K x 8 300ns 24-Pin PDIP |
| NTE2533 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 1500V HORIZONTAL OUTPUT FOR HDTV 制造商:NTE Electronics 功能描述:T-NPN-SI HORIZ OUTPUT 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 800V 50A 3-Pin(3+Tab) TO-3P |
| NTE2533-LF | 制造商:NTE Electronics 功能描述:T-NPN-SI HORIZ OUTPUT |
| NTE2534 | 制造商:NTE Electronics 功能描述:DISCONTINUED |
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