參數(shù)資料
型號： NTE251
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Darlington Power Amplifier
中文描述： 硅達(dá)林頓晶體管互補(bǔ)功率放大器
文件頁數(shù)： 2/3頁
文件大?。?/td> 26K
代理商： NTE251
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector
–
Emitter SustainingVoltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0
100
–
–
V
Collector Cutoff Current
I
CEO
V
CE
= 50V, I
E
= 0
–
–
1.0
mA
I
CEX
V
CE
= 100V, V
BE(off)
= 1.5V
–
–
0.5
mA
V
CE
= 100V, V
BE(off)
= 1.5V,
T
A
= +150
°
C
V
BE
= 5V, I
C
= 0
–
–
5.0
mA
Emitter Cutoff Current
I
EBO
–
–
2.0
mA
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 10A
750
–
18000
V
CE
= 3V, I
C
= 20A
100
–
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 40mA
–
–
2.0
V
I
C
= 20A, I
B
= 200mA
–
–
3.0
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
I
C
= 20A, I
B
= 200mA
–
–
4.0
V
Base
–
Emitter ON Voltage
V
BE(on)
V
CE
= 3V, I
C
= 10A
–
–
2.8
V
Dynamic Characteristics
Small
–
Signal Current Gain
h
fe
V
CE
= 3V, I
C
= 10A, f = 1kHz
300
–
–
Magnitude of Common Emitter
Small
–
Signal Short
–
Circuit
Forward Current Transfer Ratio
|h
fe
|
V
CE
= 3V, I
C
= 10A, f = 1MHz
4.0
–
–
MHz
Output Capacitance
NTE251
NTE252
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
–
–
–
–
400
600
pF
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%
Schematic Diagram
NPN
PNP
B
C
E
B
C
E
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