參數(shù)資料
型號(hào)： NTE2386
廠商： NTE Electronics, Inc.
英文描述： MOSFET N-Channel Enhancemen Mode, High Speed Switch
中文描述： MOSFET的N溝道Enhancemen模式，高速開(kāi)關(guān)
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 27K
代理商： NTE2386
NTE2386
MOSFET
N–Channel Enhancemen Mode,
High Speed Switch
Description:
The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching,
ease of paralleling and temperature stability, and is suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings:
Continuous Drain Current, I
D
(T
C
= +25
°
C)
(T
C
= +100
°
C)
Pulsed Drain Current (Note 1), I
DM
Maximum Power Dissipation (T
C
= +25
°
C), P
D
(Derate linearly above +25
°
C)
Gate–to–Source Voltage, V
GS
Single Pulse Avalanche Energy (Note 2), E
AS
Avalanche Current (Repetitive or Non–Repetitive, Note 1), I
AR
Repetitive Avalanche Energy (Note 1), E
AR
Peak Diode Recovery (Note 3), dv/dt
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), T
L
6.2A
2.8A
25A
125W
1.0W/
°
C
±
20V
670mJ
6.2A
13mJ
3.0V/mS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . .
+300
°
C
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