參數(shù)資料
型號(hào)： NTE2404
廠商： NTE Electronics, Inc.
英文描述： DIODE, TVS SMB 600W 33V
中文描述： 硅達(dá)林頓晶體管互補(bǔ)，通用
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 21K
代理商： NTE2404
NTE238
Silicon NPN Transistor
Color TV, Horizontal Output
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.
Features:
V
CEX
= 1500V
Safe Operating Area @ 50
μ
s = 20A, 400V
Absolute Maximum Ratings;
Collector–Emitter Voltage, V
CEX
Emitter–Base Voltage, V
EB
Collector Current–Continuous, I
C
Base Current–Continuous, I
B
Emitter Current–Continuous, I
E
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), T
L
1500V
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
8A
4A
12A
100W
0.8W/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
1.25
°
C/W
. . . . . . . . .
+275
°
C
Electrical Characteristics:
(T
C
=+25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
CES
I
EBO
V
C
= 50mA, I
B
= 0
V
CE
= 1500V, V
BE
= 0
V
BE
= 5V, I
C
= 0
750
–
–
V
Collector Cutoff Current
–
–
0.25
mA
Emitter Cutoff Current
–
–
0.1
mA
ON Characteristics
(Note 1)
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
I
C
= 5A, I
B
= 1A
I
C
= 5A, I
B
= 1A
–
–
5.0
V
Base Emitter Saturation Voltage
–
–
1.5
V
SWITCHING CHARACTERISTICS
Fall Time
t
f
I
C
= 5A, I
B1
= 1A, L
B
= 8
μ
H
–
0.4
1.0
μ
s
Note 1. Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle = 2%.
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