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參數(shù)資料
| 型號： | NTE2392 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | MOSFET N-Channel Enhancement Mode, High Speed Switch |
| 中文描述： | MOSFET的N溝道增強模式，高速開關(guān) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 27K |
| 代理商： | NTE2392 |
NTE2392
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), V
DS
Drain–Gate Voltage (R
GS
= 20k
,
Note 1), V
DGR
Gate–Source Voltage, V
GS
Pulsed Drain Current (Note 3), I
DM
Clamped Inductive Current (L = 100
μ
H), I
LM
Continuous Drain Current, I
D
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation (T
C
= +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), T
L
Maximum Thermal Resistance, Junction–to–Case, R
thJC
Typical Thermal Resistance, Case–to–Sink (Note 4), R
thCS
Maximum Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1. T
J
= +25
°
to +150
°
C
Note 2. Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Mounting surface flat, smooth, and greased.
100V
100V
±
20V
160A
160A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40A
25A
150W
1.2W/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . .
0.83
°
C/W
+300
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
0.1
°
C/W
30
°
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2393 | 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 500V ID=9A TO-3P CASE HIGH SPEED SWITCH ENHANCEMENT MODE 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET 500V 9A TO-3P 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 500V, 9A, TO-3P 制造商:NTE Electronics 功能描述:MOSFET-N CHAN 500V- 9AMP 制造商:NTE Electronics 功能描述:N-CH 500V 9A TO-3P 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 500V, 9A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-3P |
| NTE2394 | 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 500V ID=14A TO-3P CASE HIGH SPEED SWITCH ENHANCEMENT MODE 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET 500V 14A TO-3P 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 500V, 14A, TO-3P 制造商:NTE Electronics 功能描述:MOSFET-N CHAN-500V-14AMP 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 500V, 14A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-3P |
| NTE2395 | 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:MOSFET N 制造商:NTE Electronics 功能描述:MOSFET, N 制造商:NTE Electronics 功能描述:N CHANNEL MOSFET, 60V, 50A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 |
| NTE2395 | 制造商:NTE Electronics 功能描述:MOSFET |
| NTE2396 | 制造商:NTE Electronics 功能描述:POWER MOSFET N-CHANNEL 100V ID=28A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD 制造商:NTE Electronics 功能描述:ENHANCEMENT MODE N-CH MOSFET 100V 28A 制造商:NTE Electronics 功能描述:ENHANCEMENT MODE N-CH MOSFET, 100V, 28A, 制造商:NTE Electronics 功能描述:MOSFET-PWR 100V 28A 制造商:NTE Electronics 功能描述:ENHANCEMENT MODE N-CH MOSFET, 100V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220 |
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