參數(shù)資料
型號(hào)： NTE2340
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-SOIC -25 to 85
中文描述： 硅NPN晶體管達(dá)林頓功率放大器，開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 22K
代理商： NTE2340
NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
60V Zener Diode Built–In Between Collector and Base
Very Small Fluctuation in Breakdown Voltages
Large Energy Handling Capability
High Speed Switching
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
±
10V
60
±
10V
7V
8A
12A
1.3W
45W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Collector Cut–Off Current
Emitter Cut–Off Current
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 5mA, I
B
= 0
DC Current Gain
Symbol
I
CBO
I
EBO
Test Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 7V, I
C
= 0
Min
–
–
50
2000
500
–
–
–
–
–
–
50
Typ
–
–
–
–
–
–
–
20
0.5
4.0
1.0
–
Max
100
2
70
5000
–
1.5
2.0
–
–
–
–
–
Unit
μ
A
mA
V
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
V
CC
= 50V, I
B1
= –I
B2
= 8mA,
I
C
= 4A
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
Turn–On Time
Storage Time
Fall Time
Energy Handling Capability
V
V
MHz
μ
s
μ
s
μ
s
mJ
I
C
= 1A, L = 100mH,
R
BE
= 100
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