參數(shù)資料
型號: NTE2334
廠商: NTE Electronics, Inc.
英文描述: Quad Differential Comparator 14-TSSOP -25 to 85
中文描述: 硅NPN晶體管達林頓驅(qū)動w /內(nèi)置阻尼器和穩(wěn)壓二極管
文件頁數(shù): 1/2頁
文件大小: 23K
代理商: NTE2334
NTE2334
Silicon NPN Transistor
Darlington Driver
w
/Internal Damper
and Zener Diode
Description:
The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220
type package designed for use in applications such as the switching of the L load of a motor driver,
hammer driver, relay driver, etc.
Features:
High DC Current Gain
Large Current Capacity and Wide ASO
Contains 60
±
10V Avalanche Diode between Collector and Base
High 50mJ Reverse Energy Rating
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
±
10V
60
±
10V
6V
5A
8A
500mA
40W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
BE
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 2.5A
V
CE
= 5V, I
C
= 2.5A
Min
1000 4000
Typ
Max
100
3
Unit
μ
A
mA
20
MHz
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