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參數(shù)資料
| 型號： | NTE2336 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-SOIC -25 to 85 |
| 中文描述： | 達林頓硅NPN晶體管開關w /內置阻尼器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE2336 |
NTE2336
Silicon NPN Transistor
Darlington Switch
w
/Internal Damper
& Zener Diode
Features:
60V Zener Diode Built–In Between Collector and Base
Low Fluctuation in Breakdown Voltages
High Energy Handling Capability
High Speed Switching
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
A
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
±
10V
60
±
10V
7V
8A
12A
45W
2W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Collector Cutoff Current
I
CBO
I
EBO
V
CEO
h
FE
V
CB
= 50V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 5mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 500mA, f = 1MHz
–
–
100
Emitter Cutoff Current
–
–
2
Collector–Emitter Voltage
50
–
70
V
DC Current Gain
2000
–
5000
500
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
f
T
–
–
1.5
V
Base–Emitter Saturation Voltage
–
–
2.0
V
Transition Frequency
–
20
–
MHz
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