參數(shù)資料
型號(hào): NTE2338
廠商: NTE Electronics, Inc.
英文描述: Quad Differential Comparator 14-SOIC -25 to 85
中文描述: 硅NPN晶體管達(dá)林頓功放w /內(nèi)置阻尼器
文件頁數(shù): 1/2頁
文件大?。?/td> 20K
代理商: NTE2338
NTE2338
Silicon NPN Transistor
Darlington Power Amp
w/
Internal
Damper & Zener Diode
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
±
10V
7V
1.5A
3.0A
10W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)EBO
I
CEO
h
FE
V
CE(sat)
I
C
= 0.1mA, I
E
= 0
I
E
= 50mA, I
C
= 0
V
CE
= 50V, R
BE
=
V
CE
= 3V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1.5A, I
B
= 1.5mA
I
C
= 1A, I
B
= 1mA
I
C
= 1.5A, I
B
= 1.5mA
I
C
= 1A, I
B1
= –I
B2
= 1mA
50
60
70
V
Emitter–Base Breakdown Voltage
7
V
μ
A
Collector Cutoff Current
10
DC Current Gain
2000
30000
Collector–Emitter Saturation Voltage
1.5
V
2.0
V
Base–Emitter Saturation Voltage
V
BE(sat)
2.0
V
2.5
V
μ
s
μ
s
Turn–On Time
t
on
t
off
0.5
Turn–Off Time
2.0
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