參數(shù)資料
型號(hào)： NTE2327
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-SOIC -25 to 85
中文描述： 硅NPN晶體管高壓，高速開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 20K
代理商： NTE2327
NTE2327
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
BE
= 0, Peak value), V
CESM
Collector–Emitter Voltage (Open base), V
CEO
Emitter–Base Voltage (Open Collector), V
EBO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
p
= 2ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current (Peak Value, Note 1), –I
BM
Total Power Dissipation (T
MB
≤
+60
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Mounting Base, R
thJMB
Thermal Resistance, Junction–to–Ambient, R
thJA
Note 1. Turn–Off current.
1000V
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V
0.5A
1A
0.2A
0.3A
0.3A
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150
°
C
–65
°
to +150
°
C
4.5K/W
100K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Collector Cutoff Current (Note 2)
I
CES
V
CEM
= 1000V, V
BE
= 0
V
CEM
= 1000V, V
BE
= 0, T
J
= +125
°
C
I
C
= 0, V
EB
= 5V
I
C
–= 50mA, V
CE
= 5V
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.2A, I
B
= 20mA
I
C
= 0.2A, I
B
= 20mA
I
C
= 100mA, I
Boff
= 0, L = 25mH
I
C
= 50mA, V
CE
= 10V, f = 1MHz
I
Con
= 0.2A, V
CC
= 250V,
I
Bon
= 20mA, –I
Boff
= 40mA
–
–
100
–
–
1
Emitter Cutoff Current
I
EBO
h
FE
V
CE(sat)
–
–
1
mA
DC Current Gain
–
50
–
Collector–Emitter Saturation Voltage
–
–
0.8
V
–
–
1.0
V
Base–Emitter Saturation Voltage
V
BE(sat)
V
CEO(sus)
f
T
t
on
t
s
t
f
–
–
1.0
V
Collector–Emitter Sustaining Voltage
450
–
–
V
Transition Frequency
–
20
–
MHz
μ
s
μ
s
μ
s
Turn–On Time
–
0.25
0.50
Storage Time
–
2.0
3.5
Fall Time
–
0.4
1.3
Note 2. Measured with a half sine–wave voltage.
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