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參數(shù)資料
| 型號： | NTE2328 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-PDIP -25 to 85 |
| 中文描述： | cSilicon互補晶體管音頻輸出功率 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE2328 |
NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output
Features:
Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200V
200V
5V
15A
1.5A
150W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
V
CB
= 200V, I
E
= 0
V
BE
= 5V, I
C
= 0
–
–
5.0
μ
A
μ
A
Emitter Cutoff Current
–
–
5.0
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
h
FE1
V
CE
= 5V, I
C
= 1A
h
FE2
V
CE
= 5V, I
C
= 8A
V
CE(sat)
I
C
= 10A, I
B
= 1A
V
BE
V
CE
= 5V, I
C
= 8A
f
T
V
CE
= 5V, I
C
= 1A
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
200
–
–
V
DC Current Gain
55
–
160
35
60
–
Collector–Emitter Saturation Voltage
–
1.5
3.0
V
Base–Emitter Voltage
–
1.0
1.5
V
Transistion Frequency
–
25
–
MHz
Collector Output Capacitance
–
470
–
pF
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