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參數(shù)資料
| 型號： | NTE232 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon PNP Transistor Darlington Amplifier, Preamp |
| 中文描述： | 硅PNP晶體管達(dá)林頓放大器，前置放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | NTE232 |
NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack-
age designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±
1/32” from case, 10sec), T
L
30V
8V
30V
300mA
625mW
5mW/
°
C
1500mW
12mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
+230
°
C
. . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Static Characteristics
Collector–Emitter Breakdown Voltage V
(BR)CES
I
C
= 100
μ
A, I
B
= 0
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max Unit
30
–
–
50k
20k
–
–
–
–
–
–
–
–
V
nA
nA
I
CBO
I
EBO
h
FE
V
CB
= 30V, I
E
= 0
V
BE
= 8V, I
C
= 0
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
CE
= 5V, Note 1
100
100
–
–
1.5
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
V
CE(sat)
V
BE(on)
0.9
1.45 2.00
V
V
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2320 | 制造商:NTE Electronics 功能描述:SI-QUAD AMP |
| NTE2321 | 制造商:NTE Electronics 功能描述:QUAD TRANSISTOR NPN SILICON 60V IC=0.5A 14-LEAD DIP 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:T-NPN-SI-QUAD GEN PURP 制造商:NTE Electronics 功能描述:TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.6V; Transition Frequency Typ ft:350MHz; Power Dissipation Pd:1.9W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Min:-65C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 30V 0.5A 14-Pin DIP |
| NTE2322 | 制造商:NTE Electronics 功能描述:QUAD TRANSISTOR PNP SILICON 60V IC=0.6A 14-LEAD DIP 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:BIPOLAR TRANS PNP QUAD -40V DIP 制造商:NTE Electronics 功能描述:BIPOLAR TRANS, PNP, QUAD, -40V, DIP 制造商:NTE Electronics 功能描述:T-PNP-SI QUAD GEN PURPOSE 制造商:NTE Electronics 功能描述:BIPOLAR TRANS, PNP, QUAD, -40V, DIP; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:650mW; DC Collector Current:600mA; DC Current Gain hFE:100; No. of Pins:14;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 40V 0.6A 14-Pin DIP |
| NTE2323 | 制造商:NTE Electronics 功能描述:DIP-14 NPN GP AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 200V 0.5A 14-Pin PDIP |
| NTE2324 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 1500V IC=8A TO-3PML CASE TF=0.1US HIGH VOLTAGE SWITCH 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 800V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 800V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 800V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Power Dissipation Pd:70W; DC Collector Current:8A; DC Current Gain hFE:10; Operating Temperature Min:-55C; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 800V 8A 3-Pin(3+Tab) |
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