參數(shù)資料
型號(hào)： NTE2321
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Quad, General Purpose
中文描述： 硅NPN晶體管四，通用
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 22K
代理商： NTE2321
NTE2321
Silicon NPN Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +25
°
C, Each Transistor), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C, Total Device), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V
60V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA
0.65W
5.2mW/
°
C
1.9W
15.2mW/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
I
C
= 10mA, I
B
= 0, Note 1
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 3V, I
E
= 0
40
–
–
V
Collector–Base Breakdown Voltage
60
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
Collector Cutoff Current
–
–
50
nA
Emitter Cutoff Current
–
–
50
nA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 300mA
I
C
= 150mA, I
B
= 15mA
I
C
= 300mA, I
B
= 30mA
75
–
–
100
–
–
30
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
–
–
0.4
V
–
–
1.6
V
Small–Signal Characteristics
Current Gain–Bandwidth Product
f
T
V
CE
= 20V, I
C
= 20mA, f = 100MHz,
Note 1
200
350
–
MHz
Output Capacitance
C
obo
C
ibo
V
BE
= 19V, I
E
= 0, f = 1MHz
V
BE
= 0.5V, I
C
= 0, f = 1MHz
–
4.5
8.0
pF
Input Capacitance
–
17
30
pF
Note 1. Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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