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參數(shù)資料
| 型號： | NTE196 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Audio Power Output and Medium Power Switching |
| 中文描述： | 硅互補(bǔ)晶體管音頻輸出功率和中功率開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE196 |
NTE196 (NPN) & NTE197 (PNP)
Silicon Complementary Transistors
Audio Power Output and Medium Power Switching
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for use in general purpose amplifier and switching applications.
Features:
DC Current Gain Specified to 7 Amps: h
FE
= 2.3 Min @ I
C
= 7A
Collector–Emitter Sustaining Voltage: V
CEO(sus)
= 70V Min
High Current–Gain Bandwidth Product:
f
T
= 4MHz Min @ I
C
= 500mA (NTE196)
= 10MHz Min @ I
C
= 500mA (NTE197)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V
80V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7A
10A
3A
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32W/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
3.125
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
Collector Cutoff Current
70
–
–
V
I
CEO
I
CEX
V
CE
= 60V, I
B
= 0
V
CE
= 80V, V
EB(off)
= 1.5V
V
CE
= 80V, V
EB(off)
= 1.5V, T
C
= +150
°
C
V
BE
= 5V, I
C
= 0
–
–
1.0
mA
–
–
100
μ
A
mA
–
–
2.0
Emitter Cutoff Current
I
EBO
–
–
1.0
mA
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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