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參數(shù)資料
| 型號： | NTE199 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Low Noise, High Gain Amplifier |
| 中文描述： | 硅NPN晶體管低噪聲，高增益放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE199 |
NTE199
Silicon NPN Transistor
Low Noise, High Gain Amplifier
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady State Collector Current (Note 1), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +55
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
L
50V
70V
5V
100mA
360mW
3.3mW/
°
C
260mW
3.3mW/
°
C
–55
°
to +125
°
C
–55
°
to +150
°
C
+260
°
C
. . . . . . . . . . . . . . . . .
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Cutoff Current
I
CBO
V
CB
= 50V
V
CB
= 50V, T
A
= +100
°
C
V
CB
= 50V
V
EB
= 5V
–
–
30
nA
–
–
10
μ
A
Collector Cutoff Current
I
CES
I
EBO
–
–
30
nA
Emitter Cutoff Current
–
–
50
nA
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