參數(shù)資料
型號(hào): NTE1979
廠商: NTE Electronics, Inc.
英文描述: Differential Comparator With Strobes 8-TSSOP 0 to 70
中文描述: 集成電路負(fù)3端穩(wěn)壓器,- 8V的,100mA的
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 25K
代理商: NTE1979
NTE1979
Integrated Circuit
Negative 3 Terminal Voltage Regulator,
–8V, 100mA
Description:
The NTE1979 is a 3–terminal fixed negative output voltage regulatgor in a TO92 type package
designed for use in power circuits with current capacity up to 100mA. Stabilized fixed output voltage
is obtained from unstable DC input voltage without the use of external components.
Features:
No External Components
Output Current in Excess of 100mA
Built–In Short–Circuit Current Limiting
Built–In Thermal Overload Protection
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Input Voltage, V
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. When T
J
exceeds +150
°
C, the internal circuit cuts off the output.
–35V
650mW
–20
°
to +80
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C, V
I
= –14V, I
O
= 40mA, C
i
= 2
μ
F, C
o
= 1
μ
F unless
otherwise specified)
Parameter
Symbol
T
J
= +25
°
C
Output Voltage Tolerance
V
O
V
I
= –11V to –23V, I
O
= 1mA to 70mA,
T
J
= 0
°
to +125
°
C
Line Regulation
REG
IN
V
I
= –10V to –24V, T
J
= +25
°
C
V
I
= –11V to –21V, T
J
= +25
°
C
Load Regulation
REG
L
I
O
= 1mA to 100mA, T
J
= +25
°
C
I
O
= 1mA to 40mA, T
J
= +25
°
C
Test Conditions
Min
Typ
Max
Unit
Output Voltage
V
O
–7.68
–8.0
–8.32
V
–7.6
–8.4
V
160
mV
80
mV
15
80
mV
7
40
mA
Note 2. The specified condition T
J
= +25
°
C means that the test should be carried out with the test
time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction
temperature can be ignored.
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