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參數(shù)資料
| 型號(hào)： | NTD4813N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 30V,40A,Single N Channel,DPAK/IPAK Power MOSFET(30V,40A,N溝道功率MOSFET) |
| 中文描述： | 30V的，40A條，單個(gè)N頻道，采用DPAK /像是iPak功率MOSFET（30V的，40A條，?溝道功率MOSFET的） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTD4813N |
NTD4813N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
0
10
15
25
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
C
Figure 7. Capacitance Variation
400
0
800
5
T
J
= 25
°
C
C
oss
C
iss
600
1000
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
V
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
15
6
6
5
I
D
= 30 A
V
DD
= 15 V
V
GS
= 11.5 V
T
J
= 25
°
C
Q
2
Q
T
7
0
0.5
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1
t
V
GS
= 0 V
T
J
= 25
°
C
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8
0.9
20
30
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1000
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
1 ms
100 s
10 ms
dc
10 s
20
9
1
100
0
25
T
J
, JUNCTION TEMPERATURE (
°
C)
I
D
= 12 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
20
60
80
100
125
E
A
150
200
40
300
700
500
900
100
12
3
2
4
1
Q
1
10
50
70
30
8
9 10 11 12 13 14 15 16
1.5
13.5
4.5
7.5
10.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD4813N-1G | 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4813N-35G | 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4813NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK |
| NTD4813NH-1G | 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4813NH-35G | 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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