參數(shù)資料
型號: NTD4813N
廠商: ON SEMICONDUCTOR
英文描述: 30V,40A,Single N Channel,DPAK/IPAK Power MOSFET(30V,40A,N溝道功率MOSFET)
中文描述: 30V的,40A條,單個N頻道,采用DPAK /像是iPak功率MOSFET(30V的,40A條,?溝道功率MOSFET的)
文件頁數(shù): 4/8頁
文件大?。?/td> 81K
代理商: NTD4813N
NTD4813N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
10 V
6 V
10
0.042
30
0.012
0.002
60
1.4
1.3
1.0
0.9
0.6
10,000
I
D
,
100,000
0
5
30
2
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
0.030
0.029
4
0.017
0.013
0.010
5
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current
vs. Drain Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
50
50
25
0
25
75
125
100
2
3
15
10
30
5
3
V
DS
10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 150
°
C
T
J
= 125
°
C
40
0
4
5
T
J
= 25
°
C
20
10
5 V
3 V
1.8
1.7
6
1000
4
1
7
6
11
0.021
40
0.022
50
4.5 V
3.6 V
3.8 V
40
10
20
60
30
20
60
10
50
I
D
= 30 A
T
J
= 25
°
C
7
8
9
0.011
0.016
0.014
0.020
0.018
0.025
0.024
0.022
25
35
45
55
V
GS
= 11.5 V
150
100
T
J
= 25
°
C
0.032
15
20
0.028
0.026
10
0.017
0.007
0.027
0.037
1.5
1.1
0.7
1.6
1.2
0.8
25
T
J
= 25
°
C
4.5
5.5
6.5
11.5
7.5
8.5
9.5
10.5
相關(guān)PDF資料
PDF描述
NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-001 Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032 Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032G Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-1G Power MOSFET 62 A, 24 V, N−Channel, DPAK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD4813N-1G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4813N-35G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4813NH 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK
NTD4813NH-1G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4813NH-35G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube