參數(shù)資料
型號: NTD4805N
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET(功率MOSFET)
中文描述: 功率MOSFET(功率MOSFET的)
文件頁數(shù): 7/8頁
文件大?。?/td> 80K
代理商: NTD4805N
NTD4805N
http://onsemi.com
7
PACKAGE DIMENSIONS
DPAK
CASE 369C01
ISSUE O
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.180
0.025
0.020
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.57
0.63
0.51
0.89
3.93
MAX
6.22
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.040
0.050
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
3 IPAK, STRAIGHT LEAD
CASE 369AC01
ISSUE O
D
A
K
B
R
V
F
G
3 PL
E
C
J
H
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.090 BSC
0.034
0.018
0.134
0.180
0.035
0.000
MAX
0.245
0.265
0.094
0.035
0.023
0.043
MIN
5.97
6.35
2.19
0.69
0.46
0.94
2.29 BSC
0.87
0.46
3.40
4.57
0.89
0.000
MAX
6.22
6.73
2.38
0.88
0.58
1.09
MILLIMETERS
INCHES
0.040
0.023
0.142
0.215
0.050
0.010
1.01
0.58
3.60
5.46
1.27
0.25
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
W
SEATING PLANE
0.13 (0.005) W
相關(guān)PDF資料
PDF描述
NTD4810N Power MOSFET 30 V, 54 A(30V, 54A, 功率MOSFET)
NTD4813N 30V,40A,Single N Channel,DPAK/IPAK Power MOSFET(30V,40A,N溝道功率MOSFET)
NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-001 Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032 Power MOSFET 62 A, 24 V, N−Channel, DPAK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD4805N-1G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4805N-35G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4805NT4G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4806N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4806N-1G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube