參數(shù)資料
型號(hào)： NTD4805N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁數(shù)： 2/8頁
文件大?。?/td> 80K
代理商： NTD4805N
NTD4805N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase (Drain)
R
JC
R
JCTAB
R
JA
R
JA
2.25
°
C/W
JunctiontoTAB (Drain)
3.5
JunctiontoAmbient Steady State (Note 1)
67
JunctiontoAmbient Steady State (Note 2)
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
111
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
27
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.86
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 10 to
11.5 V
I
D
= 30 A
4.3
5.0
m
I
D
= 15 A
4.2
V
GS
= 4.5 V
I
D
= 30 A
6.0
7.4
I
D
= 15 A
5.8
Forward Transconductance
gFS
V
DS
= 15 V, I
D
= 15 A
17
S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
2865
pF
Output Capacitance
C
oss
610
Reverse Transfer Capacitance
C
rss
338
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
20.5
26
nC
Threshold Gate Charge
Q
G(TH)
4.05
GatetoSource Charge
Q
GS
8.28
GatetoDrain Charge
Q
GD
8.36
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
48
nC
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
18.3
ns
Rise Time
t
r
101.5
TurnOff Delay Time
t
d(off)
16.3
Fall Time
t
f
10.6
TurnOn Delay Time
t
d(on)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
8.1
ns
Rise Time
t
r
23.1
TurnOff Delay Time
t
d(off)
27.1
Fall Time
t
f
5.7
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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