參數(shù)資料
型號(hào): NTD4805N
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET(功率MOSFET)
中文描述: 功率MOSFET(功率MOSFET的)
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 80K
代理商: NTD4805N
NTD4805N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
0
10
10
15
25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C
Figure 7. Capacitance Variation
1000
0
V
GS
V
DS
2000
5
5
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
iss
C
oss
C
rss
C
iss
3000
5000
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
V
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
7
4
10
5
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25
°
C
Q
2
Q
1
Q
T
25
15
0
0.5
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1000
1
t
V
GS
= 0 V
T
J
= 25
°
C
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8
0.9
20
30
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
1000
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
1 ms
100 s
10 ms
dc
10 s
20
6
1
100
0
25
T
J
, JUNCTION TEMPERATURE (
°
C)
I
D
= 29 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
50
100
150
100
125
200
250
E
A
150
4000
1
3
5
20
300
350
400
450
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