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參數(shù)資料
| 型號： | NTD32N06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 32Amps, 60Volts, N Channel DPAK(32A, 60V功率MOSFET) |
| 中文描述： | 32 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NTD32N06 |
NTD32N06
http://onsemi.com
4
V
GS
1000
100
10
1
0.1
1000
100
10
12
10
8
6
4
2
0
350
300
250
200
150
100
50
0
32
28
24
20
16
12
0
0.6
10
3200
2800
10
2400
2000
15
5
0
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
1600
1200
800
400
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
G
,
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
,
t
Q
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
I
D
,
E
A
,
A
25
0
16
20
12
8
24
4
36
1
10
100
0.76
0.88
0.72
0.68
0.92
0.64
0.96
0.1
10
100
1
25
125
150
100
75
175
50
28
32
I
D
= 32 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
8
4
0.8
0.84
Q
T
Q
2
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
V
DS
= 30 V
I
D
= 32 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25
°
C
I
D
= 32 A
10 ms
1 ms
100 s
dc
t
r
t
d(off)
t
d(on)
t
f
V
DS
Mounted on 3
″
sq. FR4 board (1
″
sq.
2 oz. Cu 0.06
″
thick single sided)
with one die operating,10 s max
R
DS(on)
Limit
Thermal Limit
Package Limit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD32N06/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 32 Amps， 60 Volts |
| NTD32N06-001 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:32 Amps, 60 Volts, N−Channel DPAK |
| NTD32N06-1G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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