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參數(shù)資料
| 型號： | NTD32N06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 32Amps, 60Volts, N Channel DPAK(32A, 60V功率MOSFET) |
| 中文描述： | 32 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NTD32N06 |
NTD32N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 4)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
70
41.6
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage (Note 4)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
2.8
7.0
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 16 Adc)
R
DS(on)
21
26
m
Static DraintoSource OnVoltage (Note 4)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 32 Adc)
(V
GS
= 10 Vdc, I
D
= 16 Adc, T
J
= 150
°
C)
V
DS(on)
0.417
0.680
0.633
0.62
Vdc
Forward Transconductance (Note 4) (V
DS
= 6 Vdc, I
D
= 16 Adc)
g
FS
21.1
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
1231
1725
pF
Output Capacitance
C
oss
346
485
Transfer Capacitance
C
rss
77
160
SWITCHING CHARACTERISTICS
(Note 5)
TurnOn Delay Time
t
d(on)
10
25
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 32 Adc,
V
GS
= 10 Vdc,
= 9.1 ) (Note 4)
R
G
9.1 ) (Note 4)
t
r
84
180
TurnOff Delay Time
t
d(off)
31
70
Fall Time
t
f
93
200
Gate Charge
(V
DS
= 48 Vdc, I
D
= 32 Adc,
V
GS
= 10 Vdc) (Note 4)
Q
T
33
60
nC
Q
1
6.0
Q
2
15
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 32 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.89
0.96
0.75
1.0
Vdc
Reverse Recovery Time
(I
S
= 32 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 4)
t
rr
52
ns
t
a
37
t
b
14.3
Reverse Recovery Stored Charge
Q
RR
0.095
C
4. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD32N06/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 32 Amps， 60 Volts |
| NTD32N06-001 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:32 Amps, 60 Volts, N−Channel DPAK |
| NTD32N06-1G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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