參數(shù)資料
型號: NTD32N06
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 32Amps, 60Volts, N Channel DPAK(32A, 60V功率MOSFET)
中文描述: 32 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369C-01, DPAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 66K
代理商: NTD32N06
NTD32N06
http://onsemi.com
3
1.8
1.6
1.2
1.4
1
0.8
0.6
100
10
1000
10000
40
20
50
10
30
0
60
0.021
0
50
4
20
2
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
0
0.038
0.034
0.03
40
30
20
0.026
0.022
0.018
0.014
0.01
10
50
60
Figure 3. OnResistance vs. GatetoSource
Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
I
D
,
60
50
50
25
0
25
75
125
100
3
4.6
5
4.2
3.8
5.4
3.4
7
0
30
40
20
50
10
60
0.019
0.022
0.02
0.018
0.023
0.024
0
40
50
30
20
60
10
V
GS
= 10 V
3
10
30
40
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6.5 V
V
GS
= 6 V
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
DS
> = 10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
5.8
6.2
6.6
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 10 V
150
175
V
GS
= 0 V
T
J
= 150
°
C
T
J
= 100
°
C
T
J
= 125
°
C
I
D
= 16 A
V
GS
= 10 V
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