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參數(shù)資料
| 型號： | NTD32N06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 32Amps, 60Volts, N Channel DPAK(32A, 60V功率MOSFET) |
| 中文描述： | 32 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NTD32N06 |
NTD32N06
http://onsemi.com
3
1.8
1.6
1.2
1.4
1
0.8
0.6
100
10
1000
10000
40
20
50
10
30
0
60
0.021
0
50
4
20
2
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
0
0.038
0.034
0.03
40
30
20
0.026
0.022
0.018
0.014
0.01
10
50
60
Figure 3. OnResistance vs. GatetoSource
Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
I
D
,
60
50
50
25
0
25
75
125
100
3
4.6
5
4.2
3.8
5.4
3.4
7
0
30
40
20
50
10
60
0.019
0.022
0.02
0.018
0.023
0.024
0
40
50
30
20
60
10
V
GS
= 10 V
3
10
30
40
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6.5 V
V
GS
= 6 V
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
DS
> = 10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
5.8
6.2
6.6
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 10 V
150
175
V
GS
= 0 V
T
J
= 150
°
C
T
J
= 100
°
C
T
J
= 125
°
C
I
D
= 16 A
V
GS
= 10 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD32N06/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 32 Amps， 60 Volts |
| NTD32N06-001 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:32 Amps, 60 Volts, N−Channel DPAK |
| NTD32N06-1G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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