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參數(shù)資料
| 型號(hào)： | NTD25P03LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 74K |
| 代理商： | NTD25P03LT4 |
NTD25P03L
http://onsemi.com
6
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded, and that the
transition time (t
r
, t
f
) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (T
J(MAX)
T
C
)/(R
JC
).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
D
can safely be
assumed to equal the values indicated.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
10
dc
10 ms
1
100
100
1 ms
0.1
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
200
120
20
0
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
E
A
,
A
25
125
150
100
75
50
100
I
D
= 20 A
40
60
140
160
180
D
,
100 s
80
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD25P03LT4G | 功能描述:MOSFET -30V -25A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD25P03LT4G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -30V 25A D-PAK |
| NTD25P03LT4G-CUT TAPE | 制造商:ON 功能描述:NTD Series P-Channel 30 V 51 mOhm 75 W Tab Mount Power MOSFET - TO-252 |
| NTD26N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTD2955 | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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