參數(shù)資料
型號(hào)： NTD25P03LT4
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET
中文描述： 25 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 74K
代理商： NTD25P03LT4
NTD25P03L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Note 3)
(V
GS
= 0 Vdc, I
D
= 250 A)
Temperature Coefficient (Positive)
V
(BR)DSS
30
24
V
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 25
°
C)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
1.0
100
A
GateBody Leakage Current
(V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
I
GSS
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
1.0
1.6
4.0
2.0
V
mV/
°
C
Static DraintoSource OnState Resistance
(V
GS
= 5.0 Vdc, I
D
= 12.5 Adc)
(V
GS
= 5.0 Vdc, I
D
= 25 Adc)
(V
GS
= 4.0 Vdc, I
D
= 10 Adc)
R
DS(on)
0.051
0.056
0.065
0.072
0.080
0.090
Forward Transconductance
(V
DS
= 8.0 Vdc, I
D
= 12.5 Adc)
g
FS
13
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
900
1260
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
290
410
Reverse Transfer Capacitance
C
rss
105
210
SWITCHING CHARACTERISTICS
(Notes 3 & 4)
TurnOn Delay Time
t
d(on)
9.0
20
ns
Rise Time
(V
DD
= 15
Vdc, I
D
= 25 A,
= 5 0 V
V
GS
= 5.0 V,
R
= 1.3 )
G
t
r
37
75
TurnOff Delay Time
t
d(off)
15
30
Fall Time
t
f
16
55
Gate Charge
Q
T
15
20
nC
(V
DS
= 24
Vdc,
= 5 0 Vdc
V
GS
= 5.0 Vdc,
I
= 25 A)
D
Q
1
3.0
Q
2
9.0
Q
3
7.0
BODYDRAIN DIODE RATINGS
(Note 3)
Diode Forward OnVoltage
(I
S
= 25 Adc, V
GS
= 0 V)
(I
S
= 25 Adc, V
GS
= 0 V, T
J
= 125
°
C)
V
SD
1.0
0.9
1.5
V
Reverse Recovery Time
t
rr
35
ns
(I
S
= 25 A, V
= 0 V,
dI
S
/dt = 100 A/ s)
t
a
20
t
b
14
Reverse Recovery Stored Charge
Q
RR
0.035
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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