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參數(shù)資料
| 型號： | NTB13N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 13 Amps, 100 Volts N–Channel Enhancement–Mode(13 A, 100 V，N通道，增強模式功率MOSFET) |
| 中文描述： | 13 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTB13N10 |
NTB13N10
http://onsemi.com
3
3
1.5
1
0.5
–50
2
2.5
26
24
12
10
8
6
4
2
0
10
7
6
5
4
3
2
1
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
0
8
9
14
18
16
20
22
Figure 1. On–Region Characteristics
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
26
24
12
10
8
6
4
2
0
10
7
6
5
4
3
2
1
0
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
0.5
0.4
0.3
0.1
10
8
6
4
2
0
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
8
6
4
2
0
0.175
0.15
0.125
0.1
0
0.2
Figure 5. On–Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
175
125
100
75
50
25
0
–25
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
30
20
1000
100
10
0
10000
Figure 6. Drain–to–Source Leakage Current
versus Voltage
I
D
,
I
D
,
R
D
,
26
12
0.2
R
D
,
26
10
R
D
I
D
,
40
100
8
9
20
60
50
70
80
90
V
GS
= 10 V
4.5 V
5 V
5.5 V
7 V
6 V
9 V
T
J
= 25
°
C
7.5 V
T
J
= 25
°
C
T
J
= –55
°
C
T
J
= 100
°
C
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= –55
°
C
T
J
= 100
°
C
V
GS
= 10 V
T
J
= 25
°
C
V
GS
= 10 V
I
D
= 6.5 A
V
GS
= 10 V
T
J
= 150
°
C
V
GS
= 0 V
T
J
= 100
°
C
14
18
16
20
22
6.5 V
8 V
14 16 18 20
22 24
V
GS
= 15 V
12
14 16
18
22
24
150
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