參數(shù)資料
型號: NTA4151P
廠商: ON SEMICONDUCTOR
英文描述: Small Signal MOSFET(小信號P溝道-20V,-760mA MOSFET 帶ESD保護(hù))
中文描述: 小信號MOSFET(小信號P溝道- 20V的,-七六零毫安MOSFET的帶靜電放電保護(hù))
文件頁數(shù): 1/6頁
文件大小: 65K
代理商: NTA4151P
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
NTA4151P/D
NTA4151P, NTE4151P
Small Signal MOSFET
20 V, 760 mA, Single PChannel,
Gate Zener, SC75, SC89
Features
Low R
DS(on)
for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC75 Standard Gullwing Package
ESD Protected Gate
PbFree Packages are Available
Applications
High Side Load Switch
DCDC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
6.0
V
Continuous Drain Current
(Note 1)
Steady State
I
D
760
mA
Power Dissipation (Note 1)
SC75
SC89
Steady State
P
D
301
313
mW
Pulsed Drain Current
tp =10 s
I
DM
±
1000
mA
°
C
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
150
Continuous Source Current (Body Diode)
I
S
250
mA
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260
°
C
GatetoSource ESD Rating
(Human Body Model, Method 3015)
ESD
500
V
THERMAL RESISTANCE RATINGS
JunctiontoAmbient Steady State (Note 1)
SC75
SC89
R
JA
415
400
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENT
http://onsemi.com
xx
M
= Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
xx M
R
DS(on)
TYP
I
D
MAX
V
(BR)DSS
0.26 @ 4.5 V
20 V
0.35 @ 2.5 V
760 mA
0.49 @ 1.8 V
PChannel MOSFET
G
D
S
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SC75 / SOT416
CASE 463
STYLE 5
2
1
3
3
Drain
1
Gate
2
Source
SC89
CASE 463C
2
1
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTA4151PT1 功能描述:MOSFET -20V -760mA PChannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTA4151PT1G 功能描述:MOSFET -20V -760mA PChannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTA4151PT1G 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -20V 760mA SC-75 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET, -20V, 760mA SC-75
NTA4151PT1H 制造商:ON Semiconductor 功能描述:PFET SC75 20V 760MA TR - Tape and Reel
NTA4153N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89