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參數(shù)資料
| 型號： | NT5SV32M8AT-7K |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb Synchronous DRAM |
| 中文描述： | 256Mb的同步DRAM |
| 文件頁數(shù)： | 10/65頁 |
| 文件大小： | 814K |
| 代理商： | NT5SV32M8AT-7K |
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NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
REV 1.0
May, 2001
10
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting RAS high and CAS low
at the clock’ s rising edge after the necessary RAS to CAS delay (t
RCD
). WE must also be defined at this time to determine
whether the access cycle is a read operation (WE high), or a write operation (WE low). The address inputs determine the start-
ing column address.
The SDRAM provides a wide variety of fast access modes. A single Read or Write Command will initiate a serial read or write
operation on successive clock cycles up to 133MHz. The number of serial data bits for each access is equal to the burst length,
which is programmed into the Mode Register.
Similar to Page Mode of conventional DRAMs, a read or write cycle can not begin until the sense amplifiers latch the selected
row address information. The refresh period (t
REF
) is what limits the number of random column accesses to an activated bank.
A new burst access can be done even before the previous burst ends. The ability to interrupt a burst operation at every clock
cycle is supported; this is referred to as the 1-N rule. When the previous burst is interrupted by another Read or Write Com-
mand, the remaining addresses are overridden by the new address.
Precharging an active bank after each read or write operation is not necessary providing the same row is to be accessed again.
To perform a read or write cycle to a different row within an activated bank, the bank must be precharged and a new Bank Acti-
vate command must be issued. When more than one bank is activated, interleaved (ping pong) bank Read or Write operations
are possible. By using the programmed burst length and alternating the access and precharge operations between multiple
banks, fast and seamless data access operation among many different pages can be realized. When multiple banks are acti-
vated, column to column interleave operation can be done between different pages. Finally, Read or Write Commands can be
issued to the same bank or between active banks on every clock cycle.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NT5SV32M8AT-8B | 256Mb Synchronous DRAM |
| NT5SV64M4AT | 256Mb Synchronous DRAM |
| NT5SV64M4AT-7K | 256Mb Synchronous DRAM |
| NT5SV64M4AT-8B | 256Mb Synchronous DRAM |
| NT5SV64M4AT-75B | 256Mb Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT5SV32M8AT-8B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Synchronous DRAM |
| NT5SV4M16DT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM |
| NT5SV4M16DT-6K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM |
| NT5SV4M16DT-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM |
| NT5SV4M16DT7K | 制造商:Nanya Technology Corporation 功能描述: |
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