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參數(shù)資料
| 型號(hào)： | NT256D64S88A2GM-8B |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 200pin One Bank Unbuffered DDR SO-DIMM |
| 中文描述： | 200pin一個(gè)銀行緩沖的DDR SO - DIMM插槽 |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | NT256D64S88A2GM-8B |
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NT256D64S88A2GM
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DDR SO-DIMM
Absolute Maximum Ratings
Symbol
V
IN
, V
OUT
V
IN
Preliminary
01 / 2002
7
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Parameter
Rating
Units
Voltage on I/O pins relative to Vss
Voltage on Input relative to Vss
-0.5 to V
DDQ
+0.5
V
-0.5 to +3.6
V
V
DD
Voltage on VDD supply relative to Vss
-0.5 to +3.6
V
V
DDQ
T
A
T
STG
Voltage on VDDQ supply relative to Vss
Operating Temperature (Ambient)
Storage Temperature (Plastic)
-0.5 to +3.6
V
0 to+70
°
C
-55 to +150
°
C
P
D
I
OUT
Power Dissipation
Short Circuit Output Current
8
W
50
mA
Note
: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacitance
Parameter
Symbol
Max.
Units
Notes
Input Capacitance: CK0,
CK0
, CK1,
CK1
, CK2,
CK2
C
I1
12
pF
1
Input Capacitance: A0-A11, BA0, BA1,
WE
,
RAS
,
CAS
,
CKE0,
S0
C
I2
30
pF
1
Input Capacitance: SA0-SA2, SCL
C
I4
9
pF
1
Input/Output Capacitance DQ0-63; DQS0-7
C
IO1
7
pF
1,2
Input/Output Capacitance: SDA
1. V
DDQ
= V
DD
= 2.5V ± 0.2V, f = 100 MHz, T
A
= 25
°
C, V
OUT
(DC) = V
DDQ
/2, V
OUT
(Peak to Peak) = 0.2V.
2. DQS inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at
the board level.
C
IO3
11
pF
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