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| 型號： | NIMD6302R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
| 中文描述： | 6500 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 97K |
| 代理商： | NIMD6302R2 |
NIMD6302R2
http://onsemi.com
3
MAIN MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Notes 6 & 7)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
= 3 0 Adc V
(I
S
= 3.0 Adc, V
GS
= 0 Vdc T
J
= 125
°
C)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc, T
J
= 175
°
C)
V
SD
–
–
–
0.79
0 65
0.65
0.58
0.86
0 72
0.72
0.64
Vdc
Reverse Recovery Time
(Note 7)
t
rr
–
30.8
41
ns
(I
S
= 3 0 Adc V
= 0 Vdc
/dt = 100 A/ s)
dI
S
/dt 100 A/ s)
t
a
–
14.6
18
t
b
–
15.2
20.2
Reverse Recovery Stored Charge
(Note 7)
Q
RR
–
0.020
0.03
C
MIRROR MOSFET CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Main/Mirror MOSFET Current Ratio
Operating in the Saturation Region
(V
DS
= 6.0 Vdc, I
Dmain
= 5.0 mA)
(V
DS
= 6.0 Vdc, I
= 5.0 mA,
T
A
= 125
°
C)
I
RAT
170
167
200
196
230
225
–
Main/Mirror Current Ratio Variation
versus Temperature Operating in
the Saturation Region
(V
DS
= 6.0 Vdc, I
Dmain
= 5.0 mA,
T
A
= 25 to 125
°
C)
I
RAT
170
200
230
–
Main/Mirror MOSFET Current Ratio
Operating in the Linear Region
(V
GS
= 3.0 Vdc, I
Dmain
= 1.0 A)
(V
GS
= 3.0 Vdc, I
Dmain
= 1.0 A,
T
A
= 175
I
RAT
166
165
172
171
178
177
–
Main/Mirror Current Ratio Variation
versus Temperature Operating in
the Linear Region
(V
GS
= 3.0 Vdc, I
= 1.0 A,
T
A
= –40 to +175
°
C)
I
RAT
166
172
184
–
Main/Mirror MOSFET Current Ratio
Operating in the Linear Region
(V
GS
= 5.0 Vdc, I
Dmain
= 1.0 A)
(V
GS
= 5.0 Vdc, I
Dmain
= 1.0 A,
T
A
= 175
I
RAT
150
155
155
161
160
166
–
Main/Mirror Current Ratio Variation
versus Temperature Operating in
the Linear Region
(V
GS
= 5.0 Vdc, I
Dmain
= 1.0 A,
T
A
= –40 to +175
°
C)
I
RAT
150
155
166
–
Main/Mirror MOSFET Current Ratio
Operating in the Linear Region
(V
GS
= 10 Vdc, I
Dmain
= 1.0 A)
(V
GS
= 10 Vdc, I
Dmain
= 1.0 A,
T
A
= 175
I
RAT
141
148
146
153
155
157
–
Main/Mirror Current Ratio Variation
versus Temperature Operating in
the Linear Region
(V
GS
= 10 Vdc, I
Dmain
= 1.0 A,
T
A
= –40 to +175
°
C)
I
RAT
141
146
157
–
MAIN AND SENSE MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Electro–Static Discharge (ESD)
Capability
Main FET
Sense FET
–
–
1800
1800
–
–
–
–
V
Charge Device Model (CDM)
Capability
Main/Sense FET
–
2000
–
–
V
6. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NIMD6302R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET |
| NIMD6302R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET |
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