- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361118 > NIMD6302R2 (ON SEMICONDUCTOR) HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET PDF資料下載
參數(shù)資料
| 型號(hào)： | NIMD6302R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
| 中文描述： | 6500 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 97K |
| 代理商： | NIMD6302R2 |
NIMD6302R2
http://onsemi.com
11
PACKAGE DIMENSIONS
SO–8
CASE 751–07
ISSUE AA
SEATING
PLANE
1
4
5
8
N
J
X 45
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDAARD IS 751-07
A
B
S
D
H
C
0.10 (0.004)
DIM
A
B
C
D
G
H
J
K
M
N
S
MIN
4.80
3.80
1.35
0.33
MAX
5.00
4.00
1.75
0.51
MIN
0.189
0.150
0.053
0.013
MAX
0.197
0.157
0.069
0.020
INCHES
MILLIMETERS
1.27 BSC
0.10
0.19
0.40
0
0.25
5.80
0.050 BSC
0.004
0.007
0.016
0
0.010
0.228
0.25
0.25
1.27
8
0.50
6.20
0.010
0.010
0.050
8
0.020
0.244
–X–
–Y–
G
M
Y
M
0.25 (0.010)
–Z–
Y
M
0.25 (0.010)
Z
S
X
S
M
STYLE 19:
PIN 1.
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
MIRROR 2
DRAIN 1
MIRROR 1
2.
3.
4.
5.
6.
7.
8.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NIS6111 | BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode(BERS IC，高效，高速二極管) |
| NJ8811 | CONTROL CIRCUIT FOR FREQUENCY SYNHESIS |
| NJ8812 | CONTROL CIRCUIT FOR FREQUENCY SYNHESIS |
| NJD2873T4 | NPN Silicon DPAK For Surface Mount Applications |
| NJD2873T4G | NPN Silicon DPAK For Surface Mount Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NIMD6302R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET |
| NIMD6302R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET |
| NIMES-3980 | 制造商:NI 制造商全稱:National Instruments Corporation 功能描述:Industrial Ethernet Switches - Managed and Unmanaged |
| NIMH AA CELL (1300MAH) | 制造商:ANSMANN 功能描述:NIMH AA CELL 1300MAH |
| NIMH AA CELL (2700MAH) | 制造商:ANSMANN 功能描述:NIMH AA CELL 2700MAH |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。