參數(shù)資料
型號： NIF9N05CL
廠商： ON SEMICONDUCTOR
英文描述： Protected Power MOSFET
中文描述： 受保護的功率MOSFET
文件頁數(shù)： 1/6頁
文件大?。?/td> 78K
代理商： NIF9N05CL
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 5
1
Publication Order Number:
NIF9N05CL/D
NIF9N05CL
Protected Power MOSFET
2.6 A, 52 V, NChannel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a SOT223 Package
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source
ESD Protection HBM 5000 V
Active OverVoltage Gate to Drain Clamp
Scalable to Lower or Higher R
DS(on)
Internal Series Gate Resistance
PbFree Packages are Available
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
5259
V
GatetoSource Voltage Continuous
V
GS
±
15
V
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
= 10 s) (Note 1)
I
D
I
DM
2.6
10
A
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
1.69
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to 150
°
C
Single Pulse DraintoSource
Avalanche Energy (V
DD
= 50 V, I
D(pk)
= 1.17
A, V
GS
= 10 V, L = 160 mH, R
G
= 25 )
E
AS
110
mJ
Thermal Resistance,
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JA
R
JA
74
169
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from Case for 10 Seconds
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1
″
pad size, (Cu area 1.127 in
2
).
2. When surface mounted to a FR4 board using minimum recommended pad
size, (Cu area 0.412 in
2
).
M
PWR
Gate
(Pin 1)
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
SOT223
CASE 318E
STYLE 3
DRAIN
GATE
DRAIN
SOURCE
(Top View)
MARKING DIAGRAM
A
F
A
Y
W
F9N05 = Specific Device Code
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
= Work Week
1
2
3
4
V
DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
52 V
107 m
2.6 A
Source
(Pin 3)
Drain
(Pins 2, 4)
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料
PDF描述
NIF9N05CL_06 Protected Power MOSFET
NIF9N05CLT1G Protected Power MOSFET
NIF9N05CLT3 Protected Power MOSFET
NIF9N05CLT3G Protected Power MOSFET
NILMS4501N Power MOSFET with Current Mirror FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NIF9N05CL_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Protected Power MOSFET
NIF9N05CLT1 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NIF9N05CLT1G 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NIF9N05CLT3 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NIF9N05CLT3G 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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