參數(shù)資料
型號: NILMS4501N
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET with Current Mirror FET
中文描述: 功率MOSFET場效應管的電流鏡
文件頁數(shù): 1/9頁
文件大小: 97K
代理商: NILMS4501N
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 4
1
Publication Order Number:
NILMS4501N/D
NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, NChannel, ESD Protected,
1:250 Current Mirror, SO8 Leadless
NChannel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
transfer.
Features
Current Sense MOSFET
15% Current Mirror Accuracy
ESD Protected on the Main and the Mirror MOSFET
Low Gate Charge
PbFree Package is Available*
Applications
DCDC Converters
Voltage Regulator Modules
Small DC Motor Controls
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
NILMS4501NR2
PLLP4
2500/Tape & Reel
PLLP4
CASE 508AA
Main
Drain
Source
Sense
Gate
MARKING
DIAGRAM
4501N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
NChannel with Current
Mirror FET
V
DSS
R
DS(on)
Typ
I
D
MAX
24 V
12 m @ 4.5 V
9.5 A
http://onsemi.com
4501N
AYWW
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
PIN CONNECTIONS
Sense (1)
Source (2)
Gate (3)
Drain (4)
(Bottom View)
NILMS4501NR2G
PLLP4
(PbFree)
2500/Tape & Reel
相關PDF資料
PDF描述
NILMS4501NR2 Power MOSFET with Current Mirror FET
NILMS4501NR2G Power MOSFET with Current Mirror FET
NIN-HC3R3JTRF Wirewound Chip Inductors
NIN-HC3R9JTRF Wirewound Chip Inductors
NIN-HC470JTRF Wirewound Chip Inductors
相關代理商/技術參數(shù)
參數(shù)描述
NILMS4501NR2 功能描述:MOSFET 24V 9.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NILMS4501NR2G 功能描述:MOSFET MI 9.5A 24V CURR MIR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NIM2-434.075-10 制造商:RADIOMETRIX 制造商全稱:RADIOMETRIX 功能描述:UHF Narrow Band Transceiver
NIM2-434.650-10 制造商:RADIOMETRIX 功能描述:TRANSCEIVER 434.65MHZ 制造商:RADIOMETRIX 功能描述:RF MOD, TXRX, FM, 434.65MHZ, 10KBPS
NIM2-434.65-10 制造商:RADIOMETRIX 制造商全稱:RADIOMETRIX 功能描述:UHF Narrow Band Transceiver