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參數(shù)資料
| 型號(hào)： | NILMS4501NR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET with Current Mirror FET |
| 中文描述： | 9.5 A, 24 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, LEADLESS, CASE 508AA-01, PLLP4, SO-8, 4 PIN |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | NILMS4501NR2G |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 4
1
Publication Order Number:
NILMS4501N/D
NILMS4501N
Power MOSFET with
Current Mirror FET
24 V, 9.5 A, NChannel, ESD Protected,
1:250 Current Mirror, SO8 Leadless
NChannel MOSFET with 1:250 current mirror device utilizing the
latest ON Semiconductor technology to achieve low figure of merit
while keeping a high accuracy in the linear region. This device takes
advantage of the latest leadless QFN package to improve thermal
transfer.
Features
Current Sense MOSFET
15% Current Mirror Accuracy
ESD Protected on the Main and the Mirror MOSFET
Low Gate Charge
PbFree Package is Available*
Applications
DCDC Converters
Voltage Regulator Modules
Small DC Motor Controls
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
NILMS4501NR2
PLLP4
2500/Tape & Reel
PLLP4
CASE 508AA
Main
Drain
Source
Sense
Gate
MARKING
DIAGRAM
4501N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
NChannel with Current
Mirror FET
V
DSS
R
DS(on)
Typ
I
D
MAX
24 V
12 m @ 4.5 V
9.5 A
http://onsemi.com
4501N
AYWW
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
PIN CONNECTIONS
Sense (1)
Source (2)
Gate (3)
Drain (4)
(Bottom View)
NILMS4501NR2G
PLLP4
(PbFree)
2500/Tape & Reel
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