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參數(shù)資料
| 型號(hào)： | NIF62514T3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Self−protected FET with Temperature and Current Limit |
| 中文描述： | 6 A, 42 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | LEAD FREE, CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NIF62514T3G |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 5
1
Publication Order Number:
NIF62514/D
NIF62514
Preferred Device
Selfprotected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low R
DS(on)
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
PbFree Packages are Available
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
40
Vdc
DraintoGate Voltage Internally Clamped
(R
GS
= 1.0 M )
V
DGR
40
Vdc
GatetoSource Voltage
V
GS
16
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Pulsed (t
p
≤
10 s)
I
D
I
D
I
DM
Internally
Limited
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
@ T
A
= 25
°
C (Note 3)
P
D
1.1
1.73
8.93
W
Thermal Resistance, JunctiontoTab
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JT
R
JA
R
JA
14
114
72.3
°
C/W
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 25 Vdc, V
= 5.0 Vdc,
V
DS
= 40 Vdc, I
L
= 2.8 Apk, L = 80 mH,
R
G
= 25 )
E
AS
300
mJ
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1
″
pad board.
3. Mounted onto large heatsink.
6.0 AMPERES*
40 VOLTS CLAMPED
R
DS(on)
= 90 m
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
*Limited by the current limit circuit.
SOT223
CASE 318E
STYLE 3
1
MARKING DIAGRAM
1
A
6
A
Y
W
62514
= Assembly Location
= Year
= Work Week
= Specific Device Code
= PbFree Package
2
3
4
(Note: Microdot may be in either location)
GATE
DRAIN
SOURCE
DRAIN
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
23
4
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| NIF9N05CLT1G | 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF9N05CLT3 | 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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