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參數(shù)資料
| 型號(hào)： | NIF62514T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Self-protected FET with Temperature and Current Limit |
| 中文描述： | 6 A, 42 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | NIF62514T3 |
Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 3
1
Publication Order Number:
NIF62514/D
NIF62514
Preferred Device
Selfprotected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain-to-Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.
Features
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low R
DS(on)
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage Internally Clamped
V
DSS
40
Vdc
Drain-to-Gate Voltage Internally Clamped
(R
GS
= 1.0 M )
V
DGR
40
Vdc
Gate-to-Source Voltage
V
GS
16
Vdc
Drain Current
- Continuous @ T
A
= 25
°
C
- Continuous @ T
A
= 100
°
C
- Pulsed (t
p
≤
10 s)
I
D
I
D
I
DM
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
@ T
A
= 25
°
C (Note 3)
P
D
1.1
1.73
8.93
W
Thermal Resistance
- Junction-to-Tab
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
R
JT
R
JA
R
JA
14
114
72.3
°
C/W
Single Pulse Drain-to-Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 40 Vdc, I
L
= 2.8 Apk, L = 80 mH,
R
G
= 25 )
E
AS
300
mJ
Operating and Storage Temperature Range
T
J
, T
stg
-55 to
150
°
C
1. Mounted onto min pad board.
2. Mounted onto 1
″
pad board.
3. Mounted onto large heatsink.
6.0 AMPERES*
40 VOLTS CLAMPED
R
DS(on)
= 90 m
Device
Package
Shipping
ORDERING INFORMATION
NIF62514T1
SOT-223
1000/Tape & Reel
SOT-223
CASE 318E
STYLE 3
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
DRAIN
GATE
DRAIN
SOURCE
(Top View)
MARKING DIAGRAM
1
6
L
62514
L
WW
= Specific Device Code
= Location Code
= Work Week
2
3
4
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
NIF62514T3
SOT-223
4000/Tape & Reel
*Limited by the current limit circuit.
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| NIF62514T3G | 功能描述:MOSFET 42V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| NIF9N05CL_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Protected Power MOSFET |
| NIF9N05CLT1 | 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF9N05CLT1G | 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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