- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361118 > NIF5003N (ON SEMICONDUCTOR) Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) PDF資料下載
參數(shù)資料
| 型號： | NIF5003N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) |
| 中文描述： | 自我保護，過熱及電流限制場效應管（帶溫度和電流限制的自保護場效應管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | NIF5003N |
NIF5003N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
100
°
C
0
35
20
3
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
D
15
5
0
Figure 1. OnRegion Characteristics
1
2
4
4
0
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0.3
4
6
0.5
0
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
R
D
D
I
D
D
0.05
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
10
30
30
1.4
1.0
50
150
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
1.0
3
5
T
J
= 55
°
C
I
D
= 3 A
T
J
= 25
°
C
0.045
0.03
70
I
D
= 3 A
V
GS
= 5 V
R
D
D
R
2
25
°
C
R
D
D
1.8
2
10
10
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
D
,
T
J
= 150
°
C
T
J
= 100
°
C
0.06
10000
100000
100
5
V
DS
≥
10 V
0.055
0
20
10
20
3
7
9
8
2
3
4
5
45
30
30
25
0.1
0.2
0.4
0.7
0.9
0.6
0.8
0.035
0.04
110 130
1000
8
12
1.5
2.5
3.5
6
7
8
9
10
0.6
0.8
1.2
1.6
90
10
40
10
25
35
15
5
4
0.5
3.5
1.5
2.5
4.5
16
2
18
6
10
14
0.07
0.065
0.075
T
J
= 25
°
C
V
GS
= 10 V
V
GS
= 5 V
相關PDF資料 |
PDF描述 |
|---|---|
| NIMD6302R2 | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
| NIS6111 | BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode(BERS IC，高效，高速二極管) |
| NJ8811 | CONTROL CIRCUIT FOR FREQUENCY SYNHESIS |
| NJ8812 | CONTROL CIRCUIT FOR FREQUENCY SYNHESIS |
| NJD2873T4 | NPN Silicon DPAK For Surface Mount Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NIF5003NT1 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT1G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT3 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT3G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF62514 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self-protected FET with Temperature and Current Limit |
發(fā)布緊急采購，3分鐘左右您將得到回復。