參數(shù)資料
型號(hào)： NIF5003N
廠商： ON SEMICONDUCTOR
英文描述： Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護(hù)FET)
中文描述： 自我保護(hù)，過熱及電流限制場(chǎng)效應(yīng)管（帶溫度和電流限制的自保護(hù)場(chǎng)效應(yīng)管）
文件頁數(shù)： 2/6頁
文件大?。?/td> 53K
代理商： NIF5003N
NIF5003N
http://onsemi.com
2
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
(V
GS
= 0 Vdc, I
D
= 250 Adc, T
J
= 40
°
C to 150
°
C)
V
(BR)DSS
42
40
46
45
51
51
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
0.6
2.5
5.0
Adc
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
I
GSS
50
125
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.7
5.0
2.2
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 25
°
C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 150
°
C)
R
DS(on)
53
95
68
123
m
Static DraintoSource OnResistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 25
°
C)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 150
°
C)
R
DS(on)
63
105
76
135
m
SourceDrain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
V
SD
0.95
1.1
V
SWITCHING CHARACTERISTICS
Turnon Time
(V
in
to 90% I
D
)
R
L
= 4.7 , V
in
= 0 to 10 V, V
DD
= 12 V
T
(on)
16
20
s
Turnoff Time
(V
in
to 10% I
D
)
R
L
= 4.7 , V
in
= 10 to 0 V, V
DD
= 12 V
T
(off)
80
100
s
Slew Rate On
R
= 4.7 ,
V
in
= 0 to 10 V, V
DD
= 12 V
dV
DS
/dt
on
1.4
V s
Slew Rate Off
R
L
= 4.7 ,
V
in
= 10 to 0 V, V
DD
= 12 V
dV
DS
/dt
off
0.5
V s
SELF PROTECTION CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted) (Note 5)
Current Limit
V
DS
= 10 V (V
GS
= 5.0 Vdc, T
J
= 150
°
C)
(V
GS
= 5.0 Vdc)
I
LIM
12
7.0
18
13
24
18
Adc
Current Limit
(V
GS
= 10 Vdc)
V
DS
= 10 V (V
GS
= 10 Vdc, T
J
= 150
°
C)
I
LIM
18
13
22
18
30
25
Adc
Temperature Limit (Turnoff)
V
GS
= 5.0 Vdc
T
LIM(off)
150
175
200
°
C
Thermal Hysteresis
V
GS
= 5.0 Vdc
T
LIM(on)
15
°
C
Temperature Limit (Turnoff)
V
GS
= 10 Vdc
T
LIM(off)
150
165
185
°
C
Thermal Hysteresis
V
GS
= 10 Vdc
T
LIM(on)
15
°
C
Input Current during Thermal Fault
V
DS
= 35 V, (V
GS
= 5.0 V, T
j
= 150
°
C)
I
g(fault)
0.6
mA
Input Current during Thermal Fault
V
DS
= 35 V, (V
GS
= 10 V, T
j
= 150
°
C)
I
g(fault)
2.0
mA
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
ElectroStatic Discharge Capability
Human Body Model (HBM)
ESD
4000
V
ElectroStatic Discharge Capability
Machine Model (MM)
ESD
400
V
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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參數(shù)描述
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NIF5003NT1G 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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NIF5003NT3G 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NIF62514 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self-protected FET with Temperature and Current Limit
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