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參數(shù)資料
| 型號： | NID9N05CLT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 9 A, 52 V, 0.181 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NID9N05CLT4G |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 7
1
Publication Order Number:
NID9N05CL/D
NID9N05CL
Power MOSFET
9.0 A, 52 V, NChannel, Logic Level,
Clamped MOSFET w/ESD Protection
in a DPAK Package
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source
ESD Protection HBM 5000 V
Active OverVoltage Gate to Drain Clamp
Scalable to Lower or Higher R
DS(on)
Internal Series Gate Resistance
PbFree Packages are Available
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
5259
V
GatetoSource Voltage Continuous
V
GS
±
15
V
Drain Current Continuous @ T
A
= 25
°
C
Drain Current
Single Pulse (t
p
= 10 s)
I
D
I
DM
9.0
35
A
Total Power Dissipation @ T
A
= 25
°
C
P
D
28.8
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to 175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
= 125
°
C
(V
DD
= 50 V, I
D(pk)
= 1.5 A, V
GS
= 10 V,
R
G
= 25 )
E
AS
160
mJ
Thermal Resistance, JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
5.2
72
100
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from Case for 10 seconds
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1
″
pad size, (Cu area 1.127 in
2
).
2. When surface mounted to a FR4 board using minimum recommended pad
size, (Cu area 0.412 in
2
).
Device
Package
Shipping
ORDERING INFORMATION
NID9N05CLT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
(Pins 2, 4)
Source
(Pin 3)
Gate
(Pin 1)
MARKING
DIAGRAM
Y
WW
D9N05CL = Device Code
G
= PbFree Package
= Year
= Work Week
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
1 = Gate
2 = Drain
3 = Source
4 = Drain
1
2
3
4
NID9N05CL
DPAK
75 Units/Rail
YWW
D9N
05CLG
V
DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
(Limited)
52 V
90 m
9.0 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NID9N05CLG
DPAK
(PbFree)
75 Units/Rail
NID9N05CLT4G
DPAK
(PbFree)
2500/Tape & Reel
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