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參數(shù)資料
| 型號(hào)： | NIF5002NT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Self−Protected FET with Temperature and Current Limit |
| 中文描述： | BUF OR INV BASED PRPHL DRVR |
| 封裝： | LEAD FREE, CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NIF5002NT3G |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 7
1
Publication Order Number:
NIF5002N/D
NIF5002N
Preferred Device
SelfProtected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single NChannel, SOT223
HDPlus devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
PbFree Packages are Available
Applications
Lighting
Solenoids
Small Motors
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
V
DGR
42
V
DraintoGate Voltage Internally Clamped
(R
G
= 1.0 M )
42
V
GatetoSource Voltage
V
GS
I
D
P
D
14
V
Continuous Drain Current
Internally Limited
Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
@ T
T
= 25
°
C (Note 3)
1.1
1.7
8.9
W
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A,
L = 300 mH, R
G(ext)
= 25 )
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
E
AS
150
mJ
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
*Max current limit value is dependent on input
condition.
SOT223
CASE 318E
STYLE 3
MARKING DIAGRAM
V
(BR)DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
42 V
165 m @ 10 V
2.0 A*
A
Y
W
5002N = Specific Device Code
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
= Work Week
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
A
5
2
3
4
GATE
DRAIN
SOURCE
DRAIN
23
4
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| NIF5002N | Self-Protected FET with Temperature and Current Limit |
| NIF5002ND | Self-Protected FET with Temperature and Current Limit |
| NIF5002NT1 | Self-Protected FET with Temperature and Current Limit |
| NIF5002NT3 | Self-Protected FET with Temperature and Current Limit |
| NIF5003NT1 | Self−Protected FET with Temperature and Current Limit |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NIF5003N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
| NIF5003NT1 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT1G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT3 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT3G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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