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參數(shù)資料
| 型號(hào)： | NIF5002N |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 英文描述： | Self-Protected FET with Temperature and Current Limit |
| 中文描述： | 自我保護(hù)的溫度和電流場(chǎng)效應(yīng)管極限 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | NIF5002N |
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 5
1
Publication Order Number:
NIF5002N/D
NIF5002N
Preferred Device
SelfProtected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single NChannel, SOT223
HDPlus
devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Applications
Lighting
Solenoids
Small Motors
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
V
DGR
42
V
DraintoGate Voltage Internally Clamped
(R
G
= 1.0 M )
42
V
GatetoSource Voltage
V
GS
I
D
P
D
14
V
Continuous Drain Current
Internally Limited
Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
@ T
T
= 25
°
C (Note 3)
1.1
1.7
8.9
W
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A,
L = 300 mH, R
G(ext)
= 25 )
THERMAL RESISTANCE RATINGS
E
AS
150
mJ
Rating
Symbol
Value
Unit
JunctiontoAmbient Steady State (Note 1)
JunctiontoAmbient Steady State (Note 2)
JunctiontoTab Steady State (Note 3)
R
JA
R
JA
R
JT
114
72
14
°
C/W
1. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06
″
thick).
2. Surfacemounted onto 2
″
sq. FR4 board (1
″
sq., 1 oz. Cu, 0.06
″
thick).
3. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06
″
thick).
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
*Max current limit value is dependent on input
condition.
Device
Package
Shipping
ORDERING INFORMATION
NIF5002NT1
SOT223
1000/Tape & Reel
NIF5002NT3
SOT223
4000/Tape & Reel
SOT223
CASE 318E
Style 3
DRAIN
GATE
DRAIN
SOURCE
(Top View)
MARKING
DIAGRAM
1
O
5
5002N
L
YM
= Specific Device Code
= Location Code
= Year, Month
2
3
4
V
(BR)DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
42 V
165 m @ 10 V
2.0 A*
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NIF5002N_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
| NIF5002ND | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Self-Protected FET with Temperature and Current Limit |
| NIF5002NT1 | 功能描述:MOSFET 42V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5002NT1G | 功能描述:MOSFET 42V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5002NT1G-CUT TAPE | 制造商:ON 功能描述:NIF Series N-Channel 42 V 165 mOhm 1.1 W SMT Self-Protected FET - SOT-223 |
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