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參數(shù)資料
| 型號(hào)： | NIF5003NT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Self−Protected FET with Temperature and Current Limit |
| 中文描述： | 14 A, 42 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | LEAD FREE, CASE 318E-04, TO-261, 4 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | NIF5003NT1G |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 2
1
Publication Order Number:
NIF5003N/D
NIF5003N
Preferred Device
SelfProtected FET
with Temperature and
Current Limit
42 V, 14 A, Single NChannel, SOT223
HDPlus
devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
V
GS
I
D
P
D
42
Vdc
GatetoSource Voltage
14
Vdc
Drain Current
Continuous
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
1.25
1.9
W
R
JC
R
JA
R
JA
E
AS
12
100
65
°
C/W
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 40 Vdc, I
L
= 3.2 Apk, L = 120 mH,
R
G
= 25
)
Operating and Storage Temperature Range
(Note 3)
400
mJ
T
J
, T
stg
55 to 150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412
″
square) FR4 PCB, 1 oz cu.
2. Mounted onto 1
″
square pad size (1.127
″
square) FR4 PCB, 1 oz cu.
3. Normal prefault operating range. See thermal limit range conditions.
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
MAX
(Limited)
42 V
53 m @ 10 V
14 A
SOT223
CASE 318E
STYLE 3
1
MARKING DIAGRAM
A
Y
W
5003N
= Assembly Location
= Year
= Work Week
= Specific Device Code
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
2
3
4
1
A
5
2
3
4
GATE
DRAIN
SOURCE
DRAIN
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| NIF5003NT3G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF62514 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Self-protected FET with Temperature and Current Limit |
| NIF62514_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Self−protected FET with Temperature and Current Limit |
| NIF62514T1 | 功能描述:MOSFET 42V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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